Spin-lattice relaxation in rare-earth salts. Neutral silicon-vacancy center in diamond: spin polarization and lifetimes. Raman spin-lattice relaxation of shallow donors in silicon. Temperature- and magnetic-field-dependent longitudinal spin relaxation in nitrogen-vacancy ensembles in diamond. Electron Paramagnetic Resonance of Transition Ions (Oxford Univ. Spin-lattice relaxation of individual solid-state spins. Ab initio calculation of the spin lattice relaxation time T 1 for nitrogen-vacancy centers in diamond. Solid-state electronic spin coherence time approaching one second. Electron spin relaxation times of phosphorus donors in silicon. Telecom-wavelength atomic quantum memory in optical fiber for heralded polarization qubits. Material platforms for spin-based photonic quantum technologies. Quantum technologies with optically interfaced solid-state spins. Control of spin defects in wide-bandgap semiconductors for quantum technologies. First principles calculation of spin-related quantities for point defect qubit research. Emerging rare-earth doped material platforms for quantum nanophotonics. Towards spintronic quantum technologies with dopants in silicon. A review on single photon sources in silicon carbide. Probing condensed matter physics with magnetometry based on nitrogen-vacancy centres in diamond. The nitrogen-vacancy colour centre in diamond. 2D materials for quantum information science. Single photon sources in atomically thin materials.
Coherent storage of microwave excitations in rare-earth nuclear spins. Loophole-free Bell inequality violation using electron spins separated by 1.3 kilometres. Single-shot readout of an electron spin in silicon. Entanglement in a solid-state spin ensemble. A ten-qubit solid-state spin register with quantum memory up to one minute. Improved quantum sensing with a single solid-state spin via spin-to-charge conversion. Sensitivity optimization for NV-diamond magnetometry. Developing silicon carbide for quantum spintronics. Quantum nanophotonics with group IV defects in diamond. Scanning confocal optical microscopy and magnetic resonance on single defect centers. A simple frequency-domain quantum computer with ions in a crystal coupled to a cavity mode. A silicon-based nuclear spin quantum computer. Electron spin resonance of rare-earth ions in thorium oxide: Yb 3+ and Er 3+. Microwave spin echoes from donor electrons in silicon. Quantum information storage for over 180 s using donor spins in a 28Si “semiconductor vacuum”. This Review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing broad guidelines for the field of solid-state spin defects for quantum information. In this Review, we expand upon all the key components of solid-state spin defects, with an emphasis on the properties of defects and of the host material, on engineering opportunities and on other pathways for improvement.
This is especially critical for discovering new relevant systems for specific quantum applications. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast increasing, and requires an in-depth understanding of the defects’ spin, optical, charge and material properties in this modern context. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing and computing. Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science that goes back to the first spin echo experiments with silicon dopants in the 1950s.
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